050-7158 rev b 7-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. APT30M36JFLL 300v 76a 0.036 ?? ?? ? g d s caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com sot-227 g s s d isotop ? "ul recognized" lower input capacitance increased power dissipation lower miller capacitance easier to drive lower gate charge, qg popular sot-227 package fast recovery body diode power mos 7 ? is a new generation of low loss, high voltage, n-channel enhancement mode power mosfets. both conduction and switchinglosses are addressed with power mos 7 ? by significantly lowering r ds(on) and q g . power mos 7 ? combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with apt'spatented metal gate structure. power mos 7 r fredfet characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) drain-source on-state resistance 2 (v gs = 10v, i d = 38a) zero gate voltage drain current (v ds = 300v, v gs = 0v) zero gate voltage drain current (v ds = 240v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 2.5ma) symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss r ds(on) i dss i gss v gs(th) unit volts ohms ana volts min typ max 300 0.036 250 1000 100 35 APT30M36JFLL 300 76 304 3040 463 3.70 -55 to 150 300 7650 2500 downloaded from: http:///
050-7158 rev b 7-2004 dynamic characteristics APT30M36JFLL source-drain diode ratings and characteristics thermal characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = -76a) peak diode recovery dv / dt 5 reverse recovery time(i s = -76a, di / dt = 100a/s) reverse recovery charge(i s = -76a, di / dt = 100a/s) peak recovery current(i s = -76a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps min typ max 76 304 1.3 8 t j = 25c 240 t j = 125c 500 t j = 25c 1.1 t j = 125c 5.2 t j = 25c 12 t j = 125c 22 symbol r jc r ja min typ max 0.27 40 unitc/w characteristicjunction to case junction to ambient symbol c iss c oss c rss q g q gs q gd t d(on) t r t d(off) t f e on e off e on e off characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller") charge turn-on delay time rise time turn-off delay time fall time turn-on switching energy 6 turn-off switching energyturn-on switching energy 6 turn-off switching energy test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 150v i d = 76a @ 25c resistive switching v gs = 15v v dd = 150v i d = 76a @ 25c r g = 0.6 ? inductive switching @ 25c v dd = 200v, v gs = 15v i d = 76a, r g = 5 ? inductive switching @ 125c v dd = 200v, v gs = 15v i d = 76a, r g = 5 ? min typ max 64801540 75 115 3545 15 28 29 5 660690 770 740 unit pf nc ns j 1 repetitive rating: pulse width limited by maximum junction temperature 2 pulse test: pulse width < 380 s, duty cycle < 2% 3 see mil-std-750 method 3471 4 starting t j = +25c, l = 0.87mh, r g = 25 ? , peak i l = 76a 5 dv / dt numbers reflect the limitations of the test circuit rather than the device itself. i s - i d 76a di / dt 700a/s v r 300v t j 150 c 6 eon includes diode reverse recovery. see figures 18, 20. apt reserves the right to change, without notice, the specifications and inforation contained herein. note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm single pulse z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.300.25 0.20 0.15 0.10 0.05 0 0.5 0.1 0.3 0.7 0.9 0.05 downloaded from: http:///
050-7158 rev b 7-2004 APT30M36JFLL typical performance curves r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) 0 5 10 15 20 25 30 0 2 4 6 8 10 0 20 40 60 80 100 120 140 160 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 6v 7v 6.5v 7.5v 9v 8v 10v v gs =10v v gs =20v v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle t j = +25c t j = +125c t j = -55c v ds , drain-to-source voltage (volts) figure 2, transient thermal impedance model figure 3, low voltage output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature 200160 120 8040 0 1.41.3 1.2 1.1 1.0 0.9 0.8 1.201.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 i d = 38a v gs = 10v normalized to v gs = 10v @ i d = 38a v gs =15v 250200 150 100 50 0 8070 60 50 40 30 20 10 0 2.52.0 1.5 1.0 0.5 0.0 0.02600.0585 0.185 0.00119f0.0354f 0.463f power (watts) junctiontemp. ( c) rc model case temperature. ( c) downloaded from: http:///
050-7158 rev b 7-2004 APT30M36JFLL i d (a) i d (a) figure 14, delay times vs current figure 15, rise and fall times vs current i d (a) r g , gate resistance (ohms) figure 16, switching energy vs current figure 17, switching energy vs. gate resistance v dd = 200v r g = 5 ? t j = 125c l = 100h t d(on) t d(off) e on e off e on e off t r t f switching energy ( j) t d(on) and t d(off) (ns) switching energy ( j) t r and t f (ns) v dd = 200v r g = 5 ? t j = 125c l = 100h 40 60 80 100 120 140 40 60 80 100 120 140 40 60 80 100 120 140 0 5 10 15 20 25 30 35 40 45 50 8070 60 50 40 30 20 10 0 20001500 1000 500 0 v dd = 200v i d = 76a t j = 125c l = 100h e on includes diode reverse recovery. v dd = 200v r g = 5 ? t j = 125c l = 100h e on includes diode reverse recovery. v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11,capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) 1 5 10 50 100 300 0 10 20 30 40 50 0 20 40 60 80 100 120 140 160 180 0.3 0.5 0.7 0.9 1.1 1.3 1.5 t c =+25c t j =+150c single pulse 304100 5010 51 1614 12 10 86 4 2 0 i d = 76a 20,00010,000 5,0001,000 500100 10 200100 5010 51 operation here limited by r ds (on) c rss c oss c iss 10ms 100s 1ms v ds =150v v ds = 60v v ds = 240v t j =+150c t j =+25c 140120 100 8060 40 20 0 30002500 2000 1500 1000 500 0 downloaded from: http:///
050-7158 rev b 7-2004 APT30M36JFLL typical performance curves sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source source terminals are shortedinternally. current handling capability is equal for either source terminal. apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. isotop ? is a registered trademark of sgs thomson. figure 19, turn-off switching waveforms and definitions figure 18, turn-on switching waveforms and definitions drain current drain voltage gate voltage t j 125c 10% 0 t d(off) t f switching energy 90% 90% drain current drain voltage gate voltage t j 125c switching energy 10% t d(on) 90% 5% t r 5% 10% i d d.u.t. v ds figure 20, inductive switching test circuit v dd g apt60ds30 downloaded from: http:///
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